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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...t:mm 2165 [2SA2023/2SC5611] 8.0 1.0 4.0 1.0 1.4 3.3 3.0 Features * Low collector-to-emitter saturation voltage. * Excellent dependence of hFE on current. * High-speed switching. * Micaless package facilitating mounting. 1....
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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    2SA2025

SANYO[Sanyo Semicon Device]
Part No. 2SA2025
OCR Text ...ns unit:mm 2033A [2SA2025] 4.0 3.0 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter sa...1.8 15.0 0.4 0.4 12 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at T...
Description PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2031 2SC5669

SANYO[Sanyo Semicon Device]
Formosa MS
Sanyo Electric Co.,Ltd.
Part No. 2SA2031 2SC5669
OCR Text ...ion of MBIT process. 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1.4 Specifications 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Note*( ) : 2SA2031 Abs...
Description NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications
230V / 15A/ AF100W Output Applications

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...1.75)3.3 (0.25)0.4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 M...
Description 140V / 10A, AF70W Output Applications

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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA608 2SA608N 2SC536N
OCR Text ...current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-B...
Description    Low-Frequency General-Purpose Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ...t Symbol V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ICBO IEBO IE=(-)10A, IC=0 VCB=(-)50V, IE=0 VEB=(-)4V, IC=0 Conditions B6...1 (-)1 typ max Unit V V V V V A A Any and all SANYO products described or contained herein do not...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ...c IB Tj TSTG RATING 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise...1) SYMBOL TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A ...
Description NPN EPITAXIAL SILICON TRANSISTOR

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    5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ A

AD[Analog Devices]
Analog Devices, Inc.
Part No. 5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ AD536ASCHIPS AD536ASD AD536ASE AD536ASH 5962-89805 AD536 AD883B AD536AKH_ AD536AKH/
OCR Text 0.2% Max Error (AD536AK) 0.5% Max Error (AD536AJ) Wide Response Capability: Computes RMS of AC and DC Signals 450 kHz Bandwidth: V rms > 100 mV 2 MHz Bandwidth: V rms > 1 V Signal Crest Factor of 7 for 1% Error dB Output with 60 dB Range Lo...
Description Complete Monolithic IC Which Performs True RMS-to-DC Conversion
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
JT 28C 26#20 2#16 SKT PLUG
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, CDIP14
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, MBCY10

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    74AC00 74AC00B 74AC00M 4692

STMicroelectronics
Part No. 74AC00 74AC00B 74AC00M 4692
OCR Text ...ature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 50 200 -65 to +150 300 Unit V V V mA mA mA mA o o ...1) Parameter Value 2 to 6 0 to VCC 0 to VCC -40 to +85 8 Un it V V V o C ns/V 1) VIN from ...
Description QUAD 2-INPUT NAND GATE
From old datasheet system

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    74AC02 74AC02B 74AC02M 4693

STMICROELECTRONICS[STMicroelectronics]
Part No. 74AC02 74AC02B 74AC02M 4693
OCR Text ...ature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 50 200 -65 to +150 300 Unit V V V mA mA mA mA o o ...1) Parameter Value 2 to 6 0 to VCC 0 to VCC -40 to +85 8 Un it V V V o C ns/V 1) VIN from ...
Description    QUAD 2-INPUT NOR GATE
From old datasheet system

File Size 67.05K  /  7 Page

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